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Wide Band Gap Semiconductors

Semiconductors Band Wide Gap - Wide-band-gap Semiconductors: Proceedings of the Seventh Ictp-Iupap Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992
Wide-band-gap Semiconductors: Proceedings of the Seventh Ictp-Iupap Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992

Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with wide band gaps exhibit unique electronic and optical properties. Their low intrinsic carrier concentrations and high breakdown voltage allow high-temperature and high-power applications (diamond, SiC etc.). The short wavelength of band-to-band transitions allows emission in the green, blue, or even UV region of the spectrum (ZnSe, GaN, etc.). In addition, many of these materials have favorable mechanical and thermal characteristics.These proceedings reflect the exciting progress made in this field. Successful p-type doping of ZnSe has recently led to the fabrication of blue-green injection lasers in ZnSe; applications of short-wavelength light-emitting devices range from color displays to optical storage. In SiC, advances in growth techniques for bulk as well as epitaxial material have made the commercial production of high-temperature and high-frequency devices possible. For GaN, refinement of growth procedures and new ways of obtaining doped material have resulted in blue-light-emitti...

  • ASIN: B00HX0PEI8
Band Semiconductors Wide Gap - Wide Band Gap Semiconductor Nanowires 1: Low-Dimensionality Effects and Growth (Electronics Engineering)
Wide Band Gap Semiconductor Nanowires 1: Low-Dimensionality Effects and Growth (Electronics Engineering)

GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanismsof ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.

  • ASIN: 1848215975
  • Part No: illustrations (black and white)
Band Semiconductors Wide Gap - Wide Band Gap Semiconductor Nanowires 2: Heterostructures and Optoelectronic Devices (Electronics Engineering)
Wide Band Gap Semiconductor Nanowires 2: Heterostructures and Optoelectronic Devices (Electronics Engineering)

This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices

  • ASIN: B00MNC4WZ2
Band Semiconductors Gap Wide - Processing of 'Wide Band Gap Semiconductors: Growth, Processing and Applications (Materials and Processing Technology)
Processing of 'Wide Band Gap Semiconductors: Growth, Processing and Applications (Materials and Processing Technology)

Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.

  • ASIN: B0089NV8P6
Band Gap Semiconductors Wide - Electromagnetic Band Gap Structures in Antenna Engineering (The Cambridge RF and Microwave Engineering Series)
Electromagnetic Band Gap Structures in Antenna Engineering (The Cambridge RF and Microwave Engineering Series)

This comprehensive, applications-oriented survey of Electromagnetic Band Gap (EBG) engineering explains the theory, analysis, and design of EBG structures. It helps you to understand EBG applications in antenna engineering through an abundance of novel antenna concepts, a wealth of practical examples, and complete design details. You discover a customized FDTD method of EBG analysis, for which accurate and efficient electromagnetic software is supplied (www.cambridge.org/9780521889919) to provide you with a powerful computational engine for your EBG designs. The first book covering EBG structures and their antenna applications, this provides a dynamic resource for engineers, and researchers and graduate students working in antennas, electromagnetics and microwaves.

  • Brand: Brand: Cambridge University Press
  • ASIN: 052188991X
Semiconductors Gap Band Wide - Wide Band-Gap Semiconductors: Volume 242 (MRS Proceedings)
Wide Band-Gap Semiconductors: Volume 242 (MRS Proceedings)

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

  • ASIN: 1558991360
Semiconductors Wide Band Gap - Characterization of Wide Bandgap Power Semiconductor Devices (Energy Engineering)
Characterization of Wide Bandgap Power Semiconductor Devices (Energy Engineering)

At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection. Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. After an introduction, the book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.

  • ASIN: 1785614916
Semiconductors Band Gap Wide - Electron Injection Effects in Wide-Band-Gap Semiconductors
Electron Injection Effects in Wide-Band-Gap Semiconductors

This review summarizes the information on the Cathodoluminescence studies of minority carrier transport in Wide-Band-Gap semiconductors, focusing on its temperature dependence and the dynamics of non-equilibrium carrier recombination. The influence of deep traps on minority carrier diffusion length and lifetime is discussed. The experimental results, showing the impact of minority carrier transport on the performance of bipolar devices, as well as a discussion of techniques, used for measurements of the minority carrier diffusion length and lifetime, are provided.

  • Brand: Ingramcontent
  • ASIN: 3659596086
 - Wide Band Gap Semiconductor Nanowires 2 - eBook
Wide Band Gap Semiconductor Nanowires 2 - eBook

Wide Band Gap Semiconductors

 - Wide Band Gap Semiconductor Nanowires 1 - eBook
Wide Band Gap Semiconductor Nanowires 1 - eBook

Wide Band Gap Semiconductors

 - Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors
Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors

Wide Band Gap Semiconductors

 - Wide-band-gap Semiconductors - eBook
Wide-band-gap Semiconductors - eBook

Wide Band Gap Semiconductors

 - Physical Properties of N-Type Gap Single Crystal Semiconductor
Physical Properties of N-Type Gap Single Crystal Semiconductor

Wide Band Gap Semiconductors

 - Device Physics of Narrow Gap Semiconductors - eBook
Device Physics of Narrow Gap Semiconductors - eBook

Wide Band Gap Semiconductors

 - Narrow Gap Semiconductors Physics and Applications : Proceedings of the International Summer School Held in Nîmes, France, September 3 - 15, 1979
Narrow Gap Semiconductors Physics and Applications : Proceedings of the International Summer School Held in Nîmes, France, September 3 - 15, 1979

Wide Band Gap Semiconductors

 - Optical Properties of III-V Semiconductors : The Influence of Multi-Valley Band Structures
Optical Properties of III-V Semiconductors : The Influence of Multi-Valley Band Structures

Wide Band Gap Semiconductors

Wide Bandgap Semiconductors

Wide Band Gap Semiconductors

Learn More: http://go.usa.gov/ZH5e Hidden inside nearly every modern electronic is a technology -- called power electronics -- that is quietly making our world run. Yet, as things like our phones, appliances and cars advance, current power electronics will no longer be able to meet our needs, ma...

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